Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities
Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities
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DOI：
10.1021/acs.nanolett.8b01170
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发表时间：
2018-06-01
期刊：
影响因子：
10.8
通讯作者：
Kato, Yuichiro K.
中科院分区：
文献类型：
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作者：
Ishii, Akihiro;He, Xiaowei;Kato, Yuichiro K.
单壁碳纳米管作为室温量子光源和硅基集成光子电路的纳米级光源是一种很有前途的材料。在这里，我们表明，在碳纳米管和硅微腔中的掺杂剂状态的集成可以在室温下在硅光子学平台上提供明亮和高纯度的单光子发射器。我们进行光致发光光谱，并观察到从掺杂剂状态的发射的增强由一个类似的因素为50，和腔增强的辐射衰减确认使用时间分辨测量，其中观察到类似的发射寿命减少30%。通过光子相关测量研究了腔耦合掺杂态发射光子的统计特性，观察到了高纯度的单光子产生。光子发射统计的激发功率依赖性表明，即使激发功率增加，光子的反聚束程度也能保持在较高水平，而单光子发射率可提高到1.7 × 10（7）Hz左右。
Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of similar to 50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a similar to 30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to similar to 1.7 X 10(7) Hz.