Neutron detection using boron gallium nitride semiconductor material
Neutron detection using boron gallium nitride semiconductor material
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DOI：
10.1063/1.4868176
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发表时间：
2014-03-01
期刊：
影响因子：
6.1
通讯作者：
Nakano, Takayuki
中科院分区：
文献类型：
--
作者：
Atsumi, Katsuhiro;Inoue, Yoku;Nakano, Takayuki
在这项研究中，我们开发了一种新的中子探测装置，使用硼镓氮化物（BGaN）半导体中的B原子作为中子转换器。采用金属有机物气相外延生长了BGaN和氮化镓（GaN）样品，并对其辐射探测性能进行了评价。GaN对α射线具有良好的灵敏度，但对γ射线的灵敏度较差。此外，我们证实，电子产生的耗尽层中子照射下。这导致了中子探测信号后，α射线产生的中子捕获的B原子。这些结果证明BGaN作为中子检测半导体材料是有用的。(C)2014年作者。
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to alpha-rays but poor sensitivity to gamma-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after alpha-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material. (C) 2014 Author(s).