Optical observation of single-carrier charging in type-II quantum ring ensembles
Optical observation of single-carrier charging in type-II quantum ring ensembles
复制标题
II型量子环系综中单载流子充电的光学观测
DOI：
10.1063/1.3688037
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发表时间：
2012
影响因子：
4
通讯作者：
M. Hayne
中科院分区：
文献类型：
--
作者：
R. Young;Ep Erwin Smakman;A. Sánchez;P. Hodgson;P. Koenraad;M. Hayne
介绍了一种高纯度的GaSb/GaAs量子环系统，该系统在GaSb环中提供强的空穴限制，在其GaAs芯中提供强的电子限制。后者是负责减少在光致发光中测量的不均匀线宽，在此材料系统中具有不同形态的纳米结构上进行的先前测量相比。这使得在光致发光的多个峰值的分辨率，由于离散充电与孔，揭示了机制负责的激发功率诱导的蓝移。
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift.
影响因子：
4
作者：
Ep Erwin Smakman;J. Garleff;R. Young;M. Hayne;P. Rambabu;P. Koenraad
通讯作者：
Ep Erwin Smakman;J. Garleff;R. Young;M. Hayne;P. Rambabu;P. Koenraad