Localized and ultrahigh-rate etching of silicon wafers using atmospheric-pressure microplasma jets
Localized and ultrahigh-rate etching of silicon wafers using atmospheric-pressure microplasma jets
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DOI：
10.1063/1.1630375
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发表时间：
2004
影响因子：
3.2
通讯作者：
T. Ichiki;Ryo Taura;Y. Horiike
中科院分区：
文献类型：
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作者：
T. Ichiki;Ryo Taura;Y. Horiike
为在小空间内制备高温高密度等离子体，研制了一种小型化的高频驱动电感耦合等离子体射流源，并对其在硅片局部刻蚀和超高速率刻蚀中的应用进行了研究。所研制的等离子体源由直径为1毫米的放电管组成，放电管一端有直径为0.1毫米的细喷嘴，周围缠绕着三圈螺线管天线。通过发射光谱估计，从喷嘴喷出的常压氩等离子体射流的电子密度为1014 ~ 1015 cm−3。通过在氩等离子体射流的下游区域加入卤素气体，研究了高速刻蚀直径数百μm的细孔。硅片和熔融石英玻璃片的最高蚀刻速率分别为4000 μm/min和14 μm/min。
A miniaturized very-high-frequency- driven inductively coupled plasma jet source has been developed for the production of high-temperature and high-density plasmas in a small space, and its application to the localized and ultrahigh-rate etching of silicon wafers has been studied. The developed plasma source consists of a 1-mm-diam discharge tube with a fine nozzle of 0.1 mm in diameter at one end and a three-turn solenoidal antenna wound around it. The electron density of atmospheric-pressure argon plasma jets blowing out from the nozzle was estimated to be 1014–1015 cm−3 by means of optical emission spectroscopy. By the addition of halogen gases into the downstream region of argon plasma jets, high-speed etching of fine holes of several hundreds μm in diameter has been investigated. The highest etch rates of 4000 μm/min and 14 μm/min have been achieved for silicon wafers and fused silica glass wafers, respectively.