Few-particle energies versus geometry and composition of InxGa1-xAs/GaAs self-organized quantum dots
Few-particle energies versus geometry and composition of InxGa1-xAs/GaAs self-organized quantum dots
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DOI:
10.1103/physrevb.79.075443
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发表时间:
2009-02-01
影响因子:
3.7
通讯作者:
Bimberg, Dieter
中科院分区:
文献类型:
--
作者:
Schliwa, Andrei;Winkelnkemper, Momme;Bimberg, Dieter
Energies of exciton, biexciton, and charged excitons for a large variety of realistic quantum dots are calculated using the configuration-interaction model in conjunction with eight-band k center dot p theory. The interrelation between quantum dot (QD) geometry and composition, the resulting shape and position of electron and hole wave functions, the direct Coulomb energies, and the changes introduced by correlation effects are analyzed in detail. The QD size, the base shape-being either circular, square, or rhombohedral-and the vertical and lateral aspect ratio are varied. Different average compositions and composition profiles, such as the "trumpet shape," or an isotropic In gradient resulting from postgrowth annealing processes are studied. The resulting spectroscopic signatures turn out to be very sensitive to all these structural and chemical parameters. We analyze their interrelation to address the band-structure inversion problem, gaining information on the QD morphology from its spectroscopic signature. The results are compared to available experimental data.