Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method
Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method
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DOI：
10.1016/j.jcrysgro.2016.08.014
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发表时间：
2016-11-01
影响因子：
1.8
通讯作者：
Yoshino, Kenji
中科院分区：
文献类型：
--
作者：
Nagaoka, Akira;Scarpulla, Michael A.;Yoshino, Kenji
研究了用移动加热法生长的高质量掺钠Cu 2 ZnSnS 4（CZTS）单晶以及掺钠对晶体基本性质的影响。在850-900 ℃的生长温度和4 mm/天的速度下，从Sn溶液中获得Na掺杂的CZTS单晶。通过粉末X射线衍射和拉曼测量确定，晶体具有锌黄锡矿结构。随着Na掺杂浓度的增加，薄膜的空穴浓度、电导率和空穴迁移率等霍尔效应特性都得到了增强。这些结果表明，Na提高了CZTS的电性能。(C)2016爱思唯尔B. V.保留所有权利。
We investigate high-quality Na-doped Cu2ZnSnS4 (CZTS) single crystals grown by using the traveling heater method and the effect of Na doping on the fundamental properties of these crystals. Na-doped CZTS single crystals were obtained from Sn solution at growth temperatures of 850-900 degrees C and at speeds of 4 mm/day. The crystals have a kesterite structure, as determined by powder X-ray diffraction and Raman measurements. The Hall effect properties such as hole concentration, conductivity, and hole mobility are enhanced with increasing Na concentration. These results reveal that Na improves the electrical properties of CZTS. (C) 2016 Elsevier B.V. All rights reserved.