A Reappraisal of the Electron Diffusion Length in Solid-State Dye-Sensitized Solar Cells
A Reappraisal of the Electron Diffusion Length in Solid-State Dye-Sensitized Solar Cells
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DOI：
10.1021/jp076457d
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发表时间：
2007-10
影响因子：
3.7
通讯作者：
J. Jennings;L. Peter
中科院分区：
文献类型：
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作者：
J. Jennings;L. Peter
染料敏化太阳能电池的性能取决于电子的输运和界面复合之间的竞争。这里的一个关键参数是电子扩散长度，其由Ln=(Dτ)1/2给出，其中D和τ分别是移动电子的扩散系数和寿命。本文介绍了一种可靠估算Ln的新方法，即用钛触头测量离阳极触头最远一侧的电子准费米能级的短路值。该信息用于定义条件，在这些条件下可以从Ln的计算中消除电子陷阱/去陷阱的影响。通过对有机空穴导体2，2‘，7，7’-四(N，N-di-p-methoxyphenylamine)9，9‘-spirobifluorene)的固体示差扫描量热仪的测量，表明Ln比先前认为的要大得多。
The performance of dye-sensitized solar cells (DSCs) depends on the competition between transport and interfacial recombination of electrons. A key parameter in this context is the electron diffusion length, which is given by Ln = (Dτ)1/2, where D and τ are, respectively, the diffusion coefficient and lifetime of mobile electrons. A new approach to the reliable estimation of Ln is described, which involves use of a titanium contact to measure the short-circuit value of the electron quasi-Fermi level on the side of the TiO2 film furthest from the anode contact. This information is used to define conditions under which the effects of electron trapping/detrapping can be eliminated from the calculation of Ln. The method is illustrated by measurements of a solid-state DSC based on the organic hole conductor 2,2‘,7,7‘-tetrakis(N,N-di-p-methoxyphenylamine)9,9‘-spirobifluorene (spiro-OMeTAD), which show that Ln is significantly greater than had been thought previously.