Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing

Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing
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DOI:
10.1002/admt.202301288
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发表时间:
2023-08
影响因子:
6.8
通讯作者:
Xiaoyu Sui;Sonal V. Rangnekar;Jaesung Lee;Stephanie E. Liu;J. Downing;Lindsay E. Chaney;Xiaodong Yan;H. Jang;H. Pu;Xiaoao Shi;Shiyu Zhou;M. Hersam;Junhong Chen
Xiaoyu Sui;Sonal V. Rangnekar;Jaesung Lee;Stephanie E. Liu;J. Downing;Lindsay E. Chaney;Xiaodong Yan;H. Jang;H. Pu;Xiaoao Shi;Shiyu Zhou;M. Hersam;Junhong Chen
中科院分区:
材料科学2区
文献类型:
--
作者:
Xiaoyu Sui;Sonal V. Rangnekar;Jaesung Lee;Stephanie E. Liu;J. Downing;Lindsay E. Chaney;Xiaodong Yan;H. Jang;H. Pu;Xiaoao Shi;Shiyu Zhou;M. Hersam;Junhong Chen

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尽管在2D材料的溶液处理方面取得了重大进展,但可靠地打印可以在场效应晶体管(FET)中有效调制的高性能半导体沟道仍然具有挑战性。在此,电化学剥离的MoS 2纳米片被喷墨印刷到半导体沟道中,导致高达103的高开/关电流比。所报道的印刷策略对于薄膜通道制造是可靠和通用的,即使在存在普遍存在的咖啡环效应的情况下。对打印图案轮廓的统计建模分析表明,间隔平行打印方法可以克服喷墨打印期间的咖啡环效应,从而产生均匀的2D薄片渗透网络。印刷特征的均匀性允许MoS 2沟道为数百微米长,这很容易适应数十微米的典型喷墨印刷分辨率,从而实现完全印刷的FET。作为概念验证,使用印刷的MoS 2作为FET沟道,并使用印刷的石墨烯作为电极和感测区域来演示FET水传感器。在传感区域功能化之后,印刷的水传感器显示出对水中低至2 ppb的Pb 2+的选择性响应。这项工作为使用2D纳米材料的基于FET的传感器和相关设备的增材纳米制造铺平了道路。
Despite significant progress in solution‐processing of 2D materials, it remains challenging to reliably print high‐performance semiconducting channels that can be efficiently modulated in a field‐effect transistor (FET). Herein, electrochemically exfoliated MoS2 nanosheets are inkjet‐printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 103. The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee‐ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee‐ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS2 channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS2 as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb2+ in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET‐based sensors and related devices using 2D nanomaterials.