Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films
Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films
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DOI：
10.1002/pssa.201700559
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发表时间：
2018-05-09
影响因子：
2
通讯作者：
Zukauskaite, Agne
中科院分区：
文献类型：
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作者：
Lu, Yuan;Reusch, Markus;Zukauskaite, Agne
采用反应脉冲直流磁控共溅射技术在Si（001）衬底上制备了氮化铝（AlN）和氮化铝钪（AlScN）压电薄膜。通过掠入射x射线衍射（GIXRD）、扫描电镜（SEM）和压电响应力显微镜（PFM），我们研究了微观结构和取向错误晶粒的存在如何影响材料的压电性能。通过对N-2浓度和靶-衬底距离的精细调节，制备出无晶粒错位的Al0.87Sc0.13N薄膜，薄膜具有低粗糙度、高c轴取向度、极性均匀、压电系数d(33)=-12.3pC/N的特点。
Reactive pulsed DC magnetron co-sputtering is used to grow piezoelectric aluminum nitride (AlN) and aluminum scandium nitride (AlScN) thin films on Si(001) substrates. By using grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and piezoresponse force microscopy (PFM), we investigate how the microstructure and the presence of misoriented grains affect the piezoelectric properties of the material. N-2 concentration and target-to-substrate distance are finely tuned to achieve thin films without misoriented grains, resulting in Al0.87Sc0.13N thin films with low roughness, high degree of c-axis orientation, homogenous polarity, and piezoelectric coefficient d(33)=-12.3pC/N.