Copper phthalocyanine thin film transistors for hydrogen sulfide detection
Copper phthalocyanine thin film transistors for hydrogen sulfide detection
复制标题
用于硫化氢检测的铜酞菁薄膜晶体管
DOI：
10.1016/j.snb.2012.09.084
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发表时间：
2013-01-01
影响因子：
8.4
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Li, Xian;Jiang, Yadong;Zhang, Bo
利用沉积在硅片上的SiO2介质层制作了用于气敏传感器的底接触有机薄膜晶体管（OTFT）。以酞菁铜（CuPc）作为OTFT器件的有源层，测试了器件的电流-电压特性和气敏特性。当器件在室温下暴露于硫化氢（H2S）气氛中时，在适当的栅极电压和漏极电压下，源极-漏极电流在几分钟内改变。传感特性的绝缘层的厚度上的依赖关系进行了研究。结果表明，绝缘层厚度为195 nm的器件与绝缘层厚度为125 nm和300 nm的器件相比，具有最佳的电学和传感性能。(C)2012年爱思唯尔B。V.保留所有权利。
Bottom contact organic thin film transistors (OTFTs) using SiO2 dielectric layer deposited on silicon wafer were fabricated for the gas sensor application. Copper phthalocyanine (CuPc) was used as an active layer of OTFT device to test current-voltage characteristics and gas-sensing properties of the device. When the device was exposed to the atmosphere of hydrogen sulfide (H2S) at room temperature, the source-drain current changed within a few minutes at the appropriate gate voltage and drain voltage. The dependence of sensing properties on the thickness of the insulator layer was investigated. The results showed that the device with an insulator layer of 195 nm exhibited the optimum electronic and sensing properties comparing with other devices based on the insulator layer of 125 nm and 300 nm. (C) 2012 Elsevier B. V. All rights reserved.