Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
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AlGaN/GaN 高电子迁移率晶体管的本征渡越延迟和有效电子速度
DOI：
10.1143/jjap.44.l211
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发表时间：
2005
影响因子：
1.5
通讯作者：
N. Shigekawa
中科院分区：
文献类型：
--
作者：
T. Suemitsu;K. Shiojima;T. Makimura;N. Shigekawa
对栅长为120-210 nm的AlGaN/GaN高电子迁移率晶体管（HEMT）进行了延迟时间分析。通过从测量的参数中去嵌入这些寄生效应，来计算出访问区域中的大寄生效应的影响。由所得到的本征渡越延迟估算出有效电子速度为1.86 ×107 cm/s。寄生延迟是测试器件延迟的主要原因。我们还发现，即使在120 nm的栅极长度的沟道充电时间是不可忽略的，而它可以在具有相同的栅极长度的InP HEMT。
A delay time analysis was carried out for AlGaN/GaN high electron mobility transistors (HEMTs) with gate lengths of 120–210 nm. The influence of the large parasitics in the access region is counted out by de-embedding these parasitics from the measured parameters. From the obtained intrinsic transit delay, the effective electron velocity is estimated to be 1.86 ×107 cm/s. The parasitic delay is rather a major cause of delay in the devices tested. We also found that the channel charging time is not negligible even at the gate length of 120 nm, whereas it can be in the InP HEMTs with the same gate length.