Broad area electron emission from oxygen absorbed homoepitaxially grown nitrogen (N)-doped chemical vapor deposited diamond (111) surface
Broad area electron emission from oxygen absorbed homoepitaxially grown nitrogen (N)-doped chemical vapor deposited diamond (111) surface
复制标题
吸收氧的同质外延生长氮 (N) 掺杂化学气相沉积金刚石 (111) 表面的大面积电子发射
DOI：
10.1116/1.1569931
复制
发表时间：
2003
影响因子：
1.4
通讯作者：
A. Sawabe
中科院分区：
文献类型：
--
作者：
H. Yamaguchi;T. Mine;Y. Suzuki;K. Okano;T. Yamada;A. Sawabe
微电子器件工程的一个明确愿景是用“冷”发射阴极取代热阴极。使用冷阴极的主要优点是它比热阴极更小，消耗更少的能量。长期以来，设计这种器件的主要障碍是无法从感兴趣的材料实现宽面积低阈值电子发射。该研究报告了来自同质外延生长的N掺杂化学气相沉积（CVD）金刚石（111）的令人惊讶的宽面积低阈值发射，这是用多晶金刚石从未实现的。此外，有一个强的相关性之间的氧吸收网站和发射网站。我们的研究结果表明，通过同质外延生长的N掺杂CVD金刚石（111）选择性吸氧，可以获得具有所需发射位置的超硬、亚稳平面冷阴极。
One of the clear visions of microelectronic device engineering has been to replace the thermal cathode by a “cold” emitting cathode. The main advantages of using a cold cathode are that it is smaller and consumes less energy than its thermal counterpart. For a long time the main obstacle to designing such a device was the inability of achieving a broad area low-threshold electron emission from material of interest. This study reports surprisingly broad area low-threshold emission from homoepitaxially grown N-doped chemical vapor deposited (CVD) diamond (111), which was never achieved with polycrystalline diamond. Moreover, there was a strong correlation between the oxygen absorbed site and emission site. Our results suggest a superhard, metastable planar cold cathode with a desired emission site can be obtained by homoepitaxially grown N-doped CVD diamond (111) with selective oxygen absorption.
含氮化学气相沉积金刚石金属-绝缘体真空式发射
DOI：
--
发表时间：
2001
期刊：
Applied Physics Letters 79
影响因子：
--
作者：
K.Okano;T.Yamada;A.Sawabe;S.Koizumi;J.Itoh;G.A.J.Amaratunga
通讯作者：
G.A.J.Amaratunga