Measurement of high-field electron transport in silicon carbide
Measurement of high-field electron transport in silicon carbide
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DOI：
10.1109/16.822266
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发表时间：
2000-02
影响因子：
3.1
通讯作者：
I. Khan;J. Cooper
中科院分区：
文献类型：
--
作者：
I. Khan;J. Cooper
我们报告最近的测量电子的漂移速度平行于基面在6 H和4 H碳化硅（SiC）作为施加电场的函数。还报道了低场迁移率和饱和漂移速度与温度的关系。室温下，6 H-SiC的饱和漂移速度约为1.9/spl times/10/sup 7/ cm/s，4 H-SiC的饱和漂移速度约为2.2/spl times/10/sup 7/ cm/s。
We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9/spl times/10/sup 7/ cm/s in 6H-SiC and 2.2/spl times/10/sup 7/ cm/s in 4H-SiC.