Ion Impacts on Graphene/Ir(111): Interface Channeling, Vacancy Funnels, and a Nanomesh
Ion Impacts on Graphene/Ir(111): Interface Channeling, Vacancy Funnels, and a Nanomesh
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DOI：
10.1021/nl304659n
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发表时间：
2013-05-01
期刊：
影响因子：
10.8
通讯作者：
Busse, Carsten
中科院分区：
文献类型：
--
作者：
Standop, Sebastian;Lehtinen, Ossi;Busse, Carsten
采用离子束实验和原子模拟相结合的方法，研究了低能Xe离子掠入射下Ir(111)衬底上石墨烯缺陷的产生。我们证明了离子在石墨烯和衬底之间的通道，产生了空位团簇的链，它们的边缘向下弯曲到衬底。这些团簇通过热激活扩散自组织成石墨烯纳米网格，因为它们在石墨烯云纹超细胞内的形成能量不同。
By combining ion beam experiments and atomistic simulations we study the production of defects in graphene on Ir(111) under grazing incidence of low energy Xe ions. We demonstrate that the ions are channeled in between graphene and the substrate, giving rise to chains of vacancy clusters with their edges bending down toward the substrate. These clusters self-organize to a graphene nanomesh via thermally activated diffusion as their formation energy varies within the graphene moire supercell.