INCORPORATION OF NITROGEN IN CHEMICAL-VAPOR-DEPOSITION DIAMOND
INCORPORATION OF NITROGEN IN CHEMICAL-VAPOR-DEPOSITION DIAMOND
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DOI：
10.1063/1.114788
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发表时间：
1995-11-06
影响因子：
4
通讯作者：
KOIDL, P
中科院分区：
文献类型：
--
作者：
SAMLENSKI, R;HAUG, C;KOIDL, P
为了研究氮的掺入，用化学气相沉积方法在{100}和{111}取向的金刚石衬底上制备了金刚石薄膜。向工艺气体中加入50ppm的同位素N-15(2)。核反应分析用于定量测定N-15的掺入浓度。这一分析是基于对N-15(p，α(1)伽马)C-12反应4.44 MeV伽马辐射的探测。通过适当地抑制伽马本底，可以获得优于0.5ppm的灵敏度。测量结果表明，氮优先掺入{111}生长区，N-15在{111}生长区的浓度比在{100}生长区的N-15浓度大3-4倍。薄膜中的NIC比处于ppm范围内，比气相中的N/C比低四个数量级。(C)1995年美国物理研究所。
To study the incorporation of nitrogen, diamond films were prepared by chemical vapor deposition homoepitaxially on {100} and {111} oriented diamond substrates. 50 ppm of isotopic N-15(2) was added to the process gas. Nuclear reaction analysis was applied to determine quantitatively the concentration of incorporated N-15. The analysis is based on the detection of the 4.44 MeV gamma-radiation of the N-15(p,alpha(1) gamma)C-12 reaction. By a proper suppression of the gamma-background, a sensitivity of better than 0.5 ppm can be achieved. The measurements reveal a preferred incorporation of nitrogen into {111} growth sectors, the N-15 concentration in {111} growth sectors is by a factor of 3-4 larger than in the {100} growth sectors. The NIC ratios in the films were found to be in the ppm regime and four orders of magnitude below the N/C ratios in the gas phase. (C) 1995 American Institute of Physics.