High quality factor and high confinement silicon resonators using etchless process
High quality factor and high confinement silicon resonators using etchless process
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DOI：
10.1364/oe.20.021341
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发表时间：
2012-09-10
期刊：
影响因子：
3.8
通讯作者：
Lipson, Michal
中科院分区：
文献类型：
--
作者：
Griffith, Austin;Cardenas, Jaime;Lipson, Michal
我们展示了用热氧化工艺制造的硅环谐振器的高质量因数和高约束。我们制作了一个弯曲半径为50 μ m的赛道谐振器，其耦合区域为5 μ m。我们实现了基本TM模式的内在质量因子为760,000，对应于0.9 dB/cm的传播损耗。基本TE模式和TM模式在波导中都受到高度限制，TE模式的有效指数为3.0，TM模式的有效指数为2.9。(C) 2012美国光学学会
We demonstrate high quality factor and high confinement in a silicon ring resonator fabricated by a thermal oxidation process. We fabricated a 50 mu m bending radius racetrack resonator, with a 5 mu m coupling region. We achieved an intrinsic quality factor of 760,000 for the fundamental TM mode, which corresponds to a propagation loss of 0.9 dB/cm. Both the fundamental TE and TM modes are highly confined in the waveguide, with effective indices of 3.0 for the TE mode and 2.9 for the TM mode. (C) 2012 Optical Society of America