Solubility of Flaws in Heavily-Doped Semiconductors
Solubility of Flaws in Heavily-Doped Semiconductors
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DOI：
10.1103/physrev.119.1480
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发表时间：
1960-09
期刊：
影响因子：
--
通讯作者：
W. Shockley;J. Moll
中科院分区：
文献类型：
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作者：
W. Shockley;J. Moll
半导体中带电杂质的溶解度取决于费米能级。这种依赖性可以理解的概念模型，其中允许杂质扩散在一个标本包含一个p\ensuremath{-}n$结，使费米能级相对于带边变化。如果杂质可以以多种电荷状态存在（即，是一个“缺陷”），那么电荷为r$乘以电子电荷的缺陷的浓度随空穴密度的r\mathrm{th}$次方而变化。将不同电荷状态的浓度相加，得到溶解度及其对空穴浓度的依赖性，从而得到费米能级。
The solubility of a charged impurity in a semiconductor depends upon the Fermi level. This dependence may be understood in terms of a conceptual model in which an impurity is allowed to diffuse in a specimen containing a $p\ensuremath{-}n$ junction, so that the Fermi level varies in respect to the band edges. If the impurity can exist in many states of charge (i.e., is a "flaw"), then the concentration of flaws with charge $r$ times the electronic charge varies as the $r\mathrm{th}$ power of the hole density. Summing the concentrations for the different states of charge gives the solubility and its dependence upon hole concentration, and, hence, Fermi level.