Free-electron-like Hall effect in high-mobility organic thin-film transistors
Free-electron-like Hall effect in high-mobility organic thin-film transistors
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DOI：
10.1103/physrevb.81.161306
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发表时间：
2010-04
影响因子：
3.7
通讯作者：
M. Yamagishi;Junshi Soeda;T. Uemura;Y. Okada;Y. Takatsuki;T. Nishikawa;Y. Nakazawa;I. Doi;K. Takimiya;J. Takeya
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文献类型：
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作者：
M. Yamagishi;Junshi Soeda;T. Uemura;Y. Okada;Y. Takatsuki;T. Nishikawa;Y. Nakazawa;I. Doi;K. Takimiya;J. Takeya
多晶二萘并噻吩并[3，2-B]噻吩薄膜高迁移率场效应晶体管中栅电压依赖的霍尔系数测量其值与累积电荷密度成正比，在室温下精确地满足自由电子公式。结果表明，在真空沉积的高迁移率有机半导体薄膜中，晶粒内的本征电荷输运是带状的，这在工业上具有重要意义。在较低的温度下，即使霍尔效应的迁移率平均在整个多晶薄膜下降，由于载流子捕获水平的存在下，在晶界，而自由电子的运输保存在晶粒中。与晶间和晶内电荷传输的单独的描述，它表明，随着温度的降低，在有机薄膜晶体管中经常显示的迁移率的降低并不一定意味着仅仅跳跃运输。
Gate-voltage-dependent Hall coefficientis measured in high-mobility field-effect transistors of polycrystalline dinaphthothieno[3,2-b]thiophene films. The value ofevolves with density of accumulated charge, precisely satisfying the free-electron formulanear room temperature. The result indicates that the intrinsic charge transport inside the grains is bandlike in the vacuum-deposited high-mobility organic-semiconductor thin films that are of significant interest in industry. At lower temperatures, even Hall-effect mobility averaged over the whole polycrystalline film decreases due to the presence of carrier-trapping levels at the grain boundaries while the free-electron-like transport is preserved in the grains. With the separated description of the intergrain and the intragrain charge transport, it is demonstrated that the reduction in mobility with decreasing temperature often shown in organic thin-film transistors does not necessarily mean mere hopping transport.