Synthesis and microwave dielectric properties of MgSiO3 ceramics
Synthesis and microwave dielectric properties of MgSiO3 ceramics
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DOI：
10.1111/j.1551-2916.2008.02499.x
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发表时间：
2008-08-01
影响因子：
3.9
通讯作者：
Choi, Byung-Hyun
中科院分区：
文献类型：
--
作者：
Song, Myung-Eun;Kim, Jin-Seong;Choi, Byung-Hyun
合成了MgSiO 3陶瓷并研究了其微波介电性能。在低于1200 ℃的温度下形成Mg 2SiO 4相，而在1200 ℃下烧制的样品中，通过SiO2和Mg 2SiO 4的反应开始形成正交MgSiO 3相。当烧结温度超过1400 ℃时，MgSiO 3陶瓷的结构由正交相转变为单斜相。在1350 ℃以上烧结的试样形成了致密的显微结构。在1380 ℃烧结13 h后，MgSiO 3陶瓷的介电常数达到6.7，Q × f=121 200 GHz，τ（f）=-17 ppm/℃。
MgSiO3 ceramics were synthesized and their microwave dielectric properties were investigated. The Mg2SiO4 phase was formed at temperatures lower than 1200 degrees C, while the orthorhombic MgSiO3 phase started to form by the reaction of SiO2 and Mg2SiO4 in the specimen fired at 1200 degrees C. The structure of the MgSiO3 ceramics was transformed from orthorhombic to monoclinic when the sintering temperature exceeded 1400 degrees C. A dense microstructure was developed for the specimens sintered at above 1350 degrees C. The excellent microwave dielectric properties of epsilon(r)=6.7, Q x f=121 200 GHz, and tau(f)=-17 ppm/degrees C were obtained from the MgSiO3 ceramics sintered at 1380 degrees C for 13 h.