Band structure and optical constants of GaAs1-xNx
Band structure and optical constants of GaAs1-xNx
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DOI：
10.1016/j.ijleo.2016.11.090
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发表时间：
2017-02
期刊：
影响因子：
3.1
通讯作者：
N. Bouarissa;S. A. Siddiqui;M. Boucenna;M. A. Khan
中科院分区：
文献类型：
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作者：
N. Bouarissa;S. A. Siddiqui;M. Boucenna;M. A. Khan
研究了闪锌矿晶体结构的GaAs1-xNx三元半导体合金在整个氮浓度范围内(x从0到1)的直接和间接禁带、反对称禁带、价带宽、折射率以及高频和静态介电常数与组份的关系。计算主要基于虚晶体近似下的赝势方法。禁带宽度随氮含量的变化反映了重要的弯曲参数。从反对称能隙的角度讨论了电离性的趋势。合金浓度对感兴趣光学参数的依赖关系被发现是高度非线性的。
The composition dependence of direct and indirect band gap energies, anti-symmetric gap, valence band width, refractive index and high-frequency and static dielectric constants has been investigated for GaAs1-xNxternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (x from 0 to 1). The calculations are mainly based on the pseudopotential approach within the virtual crystal approximation. The variation of band-gaps versus nitrogen content show important bowing parameters. Trends in ionicity have been discussed in terms of the anti-symmetric gap. The alloy concentration dependence of the optical parameters of interest is found to be highly nonlinear.