Effect of CoFe magnetic nanoparticles on the hole transport in poly(2-methoxy, 5-(2-ethylhexiloxy) 1,4-phenylenevinylene)
Effect of CoFe magnetic nanoparticles on the hole transport in poly(2-methoxy, 5-(2-ethylhexiloxy) 1,4-phenylenevinylene)
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DOI：
10.1088/0022-3727/41/18/185104
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发表时间：
2008-09
期刊：
影响因子：
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通讯作者：
Pankaj Kumar;H. Kumar;S. Chand;S. Jain;Vikram Kumar;Vinod Kumar;R. Pant;R. Tandon
中科院分区：
文献类型：
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作者：
Pankaj Kumar;H. Kumar;S. Chand;S. Jain;Vikram Kumar;Vinod Kumar;R. Pant;R. Tandon
在280-120 K温度范围内，研究了CoFe磁性纳米颗粒（MNP）掺杂对聚（2-甲氧基，5-（2-乙基己氧基）-1，4-亚苯基亚乙烯基）（MEH-PPV）薄膜空穴输运的影响.空穴在MEH-PPV中的输运是由空间电荷限制传导（SCLC）控制的，陷阱在能量空间中呈指数分布。在MEH-PPV中掺杂CoFe MNP通过引入新的陷阱位置使空穴迁移率从1 × 10−5降低到6 × 10−6 cm 2 V−1 s−1，导致其净密度从1 × 1018增加到2.1 × 1018 cm−3，这可能导致电荷载流子的平衡注入和有效复合，从而提高聚合物发光二极管的性能。
The effect of doping of CoFe magnetic nanoparticles (MNPs) on the hole transport in poly(2-methoxy,5-(2-ethylhexyloxy)-1,4-phenylenevinylene)(MEH-PPV) thin films has been investigated in the temperature range 280–120 K. Hole transport in MEH-PPV is found to be governed by space-charge-limited-conduction (SCLC) with exponential distribution of traps in energy space. Doping of CoFe MNPs in MEH-PPV reduces the hole mobility from 1 × 10−5 to 6 × 10−6 cm2 V−1 s−1 by introducing new trap sites causing their net density increase from 1 × 1018 to 2.1 × 1018 cm−3, which is likely to result in balanced injection and efficient recombination of charge carriers to improve the performance of polymer light emitting diodes.