Interpretation of the temperature-dependent behaviour of the emission from isoelectronic tellurium centres in epitaxial ZnSe1-xTex
Interpretation of the temperature-dependent behaviour of the emission from isoelectronic tellurium centres in epitaxial ZnSe1-xTex
复制标题
外延 ZnSe1-xTex 中等电子碲中心发射的温度依赖性行为的解释
DOI：
10.1088/0268-1242/7/9/010
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发表时间：
1992
影响因子：
1.9
通讯作者：
P. Wright
中科院分区：
文献类型：
--
作者：
K. A. Dhese;J. Goodwin;W. Hagston;J. E. Nicholls;J. Davies;B. Cockayne;P. Wright
用光致发光和光致发光激发光谱研究了金属有机化学气相沉积ZnSe1-xTex中等电子碲中心的发射。发射主要是两个波段，以前称为S1和S2波段，并归因于在孤立的碲离子或碲离子对或簇上的激子发射。作者用一个模型解释了这些带的温度依赖行为，在这个模型中，碲等电子中心表现为球形势阱，通过价带中的低共振态捕获空穴。当两个波段同时观测时，发射强度的变化在该模型的框架内得到了令人满意的解释，并表明S1发射是由碲对中的激子重组引起的，而S2发射是由碲三重态或更大的团簇中的激子重组引起的。
The emission from isoelectronic tellurium centres in metal-organic chemical vapour deposition ZnSe1-xTex has been investigated with photoluminescence and photoluminescence excitation spectroscopy. The emission is dominated by two bands, previously called the S1 and S2 bands and attributed to excitonic emission at isolated tellurium ions or tellurium ion pairs or clusters. The authors account for the temperature-dependent behaviour of these bands with a model in which the tellurium isoelectronic centres behave as spherical potential wells which trap holes via low lying resonant states in the valence band. Changes in intensity of the emission when both bands are observed together have been satisfactorily accounted for within the framework of this model and indicate that the S1 emission results from exciton recombination at tellurium pairs whilst the S2 emission results from recombination at tellurium triplets or larger clusters.