Growth of Vanadium and Vanadium Oxide on a Rh(110) Surface

Growth of Vanadium and Vanadium Oxide on a Rh(110) Surface
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钒和氧化钒在 Rh(110) 表面上的生长

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发表时间:
2017
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通讯作者:
R. Imbihl
R. Imbihl
中科院分区:
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文献类型:
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作者:
B. Boehn;T. Menteş;A. Locatelli;A. Sala;R. Imbihl

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利用低能电子衍射(LEED)、低能电子显微镜(LEEM)、俄格电子能谱(AES)和x射线光电子能谱(XPS)研究了钒和氧化钒在Rh(110)表面的外延生长。在370 ~ 770 K的温度下,共沉积了6层V/VOx单层膜。对于V沉积,观察到n = 2和4的(1 × n)和(n × 1)覆盖层。对于3 MLE VOx的沉积,得到了一个(12 × 1)的稳定结构。v2p3 /2的XPS显示同时存在氧化和金属或强还原(V2+) V组分。
We have studied the epitaxial growth of thin layers of vanadium and vanadium oxide on a Rh(110) surface with low-energy electron diffraction (LEED), low-energy electron microscopy (LEEM), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). Up to six monolayers of V/VOx were deposited with temperatures varying between 370 and 770 K. For V deposition, (1 × n) and (n × 1) overlayers with n = 2 and 4 are observed. For the deposition of 3 MLE of VOx, a (12 × 1) structure is obtained as a stable structure. XPS of V 2p3/2 reveals the simultaneous presence of an oxidic and a metallic or strongly reduced (V2+) V component.