Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
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Si(111) 衬底上室温外延生长 CeO2 薄膜以制备尖锐的氧化物/硅界面
DOI：
10.1143/jjap.34.l688
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发表时间：
1995
影响因子：
1.5
通讯作者：
Hideomi Koinuma Hideomi Koinuma
中科院分区：
文献类型：
--
作者：
M. Yoshimoto;Kazuki Shimozono;T. Maeda;T. Ohnishi;M. Kumagai;T. Chikyow;O. Ishiyama;M. Shinohara;Hideomi Koinuma Hideomi Koinuma
首次在Si(111)衬底上实现了高熔点CeO2薄膜的室温（20℃）外延。横截面高分辨率透射电子显微镜、卢瑟福背散射光谱和离子散射光谱证实了现有的 CeO2 薄膜形成了尖锐的氧化物/硅异质界面，没有边界非晶层和单晶性。这是通过在优化氧分压下的超高真空中进行脉冲激光沉积以及通过硅表面的氢终止来实现的。
Room-temperature (20° C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(111) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.