Bulk GaN crystals grown by HVPE
Bulk GaN crystals grown by HVPE
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DOI：
10.1016/j.jcrysgro.2009.01.046
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发表时间：
2009-05-01
影响因子：
1.8
通讯作者：
Nagao, Satoru
中科院分区：
文献类型：
--
作者：
Fujito, Kenji;Kubo, Shuichi;Nagao, Satoru
我们成功地制备了很厚的c面体氮化镓（GaN）晶体生长的氢化物气相外延。GaN体晶体的生长是在具有3 μ m GaN层的模板上进行的，所述GaN层通过金属有机化学气相沉积在（0001）蓝宝石衬底上生长。通过自分离工艺获得了无色的GaN自支撑体晶体。晶体的直径和厚度分别约为52和5.8 mm。在块状GaN晶体的46 mm直径的区域内没有观察到表面凹坑。位错密度随着生长方向（从N面侧到Ga面侧）而减小，并且范围从N面表面附近的5.1 × 10（6）cm（-2）到Ga面附近的1.2 × 10（6）cm（-2）。主要杂质是Si，其他杂质（O、C、Cl、H、Fe、Ni和Cr）接近或低于西姆斯测量的检测限。(C)2009爱思唯尔有限公司版权所有。
We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 mu m GaN layer grown by metal organic chemical vapor deposition on (0001) sapphire substrates. Colorless freestanding bulk GaN crystals were obtained through self-separation processes. The crystal's diameter and thickness were about 52 and 5.8 mm, respectively. No surface pits were observed within an area of 46 mm diameter of the bulk GaN crystal. The dislocation density decreased with growth direction (from N-face side to Ga-face side) and ranged from 5.1 x 10(6) cm(-2) near the N-face surface to 1.2 x 10(6) cm(-2) near the Ga-face. A major impurity was Si, and other impurities (O, C, Cl, H, Fe, Ni and Cr) were near or below the detection limits by SIMS measurements. (C) 2009 Elsevier B.V. All rights reserved.