Strain-induced artificial multiferroicity in Pb(Zr0.53Ti0.47)O3/Pb(Fe0.66W0.33)O3 layered nanostructure at ambient temperature
Strain-induced artificial multiferroicity in Pb(Zr0.53Ti0.47)O3/Pb(Fe0.66W0.33)O3 layered nanostructure at ambient temperature
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DOI：
10.1007/s10853-009-3503-y
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发表时间：
2009-05
影响因子：
4.5
通讯作者：
Ashok Kumar;R. Katiyar;R. Premnath;C. Rinaldi;J. Scott
中科院分区：
文献类型：
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作者：
Ashok Kumar;R. Katiyar;R. Premnath;C. Rinaldi;J. Scott
采用脉冲激光沉积法在MgO基片上制备了PZT/PFW/PZT（~5/1/5 nm，厚度~250 nm）周期性的Pb（Zr0.53Ti0.47）O3（PZT）和Pb（Fe0.66W0.33）O3（PFW）层状纳米结构。在很宽的温度和频率范围内研究了这些LN的介电行为，观察到在高温（>400 K）下具有显著偏差的Debye型弛豫。在100 kHz和400 K以下观察到高介电常数和非常低的介电损耗，而介电常数随着频率的增加而减小，损耗随着频率的增加而增加，类似于弛豫铁电体。在上下电场下观察到了非对称的铁电电滞回线，其反射极化强度（Pr）约为33 μC/cm ~ 2。在铁电滞后中观察到高印记（跨越250 nm薄膜约5- 7V），这可能是由于在层的界面处的电荷积累或跨越层的显著量的应变（约3.21）。在室温下观察到的铁磁磁滞回线的剩余磁化强度为5.32 emu/cc，矫顽场为~550 Oe。在500 kV/cm范围内，与温度和场相关的漏电流密度显示出非常低的漏电流~10−7-10−5A/cm 2。我们观察到的滞后，这可能是由于在界面处的层或位于PFW区域的极性纳米区域（PNR）的积极作用的电荷积累的印记。
Layered nanostructures (LNs) of the commercial ferroelectric Pb(Zr0.53Ti0.47)O3(PZT) and the natural ferroic relaxor Pb(Fe0.66W0.33)O3(PFW) were fabricated with a periodicity of PZT/PFW/PZT (~5/1/5 nm, thickness ~250 nm) on MgO substrates by pulsed laser deposition. The dielectric behavior of these LNs were investigated over a wide range of temperatures and frequencies, observing Debye-type relaxation with marked deviation at elevated temperatures (>400 K). High dielectric constant and very low dielectric loss were observed below 100 kHz and 400 K, whereas the dielectric constant decreases and loss increases with increase in frequency, similar to relaxor ferroelectrics. Asymmetric ferroelectric hysteresis loops across UP and DOWN electric field were observed with high remanent polarization (Pr) of about 33 μC/cm2. High imprint (~5–7 V across 250 nm thin films) were seen in ferroelectric hysteresis that may be due to charge accumulation at the interface of layers or significant amount of strain (~3.21) across the layers. Room temperature ferromagnetic hysteresis was observed with remanent magnetization 5.32 emu/cc and a coercive field of ~550 Oe. Temperature and field dependent leakage current densities showed very low leakage ~10−7–10−5A/cm2over 500 kV/cm. We observed imprint in hysteresis that may be due to charge accumulation at the interface of layers or active role of polar nano regions (PNRs) situated in the PFW regions.