Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films
Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films
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DOI：
10.1063/1.2928230
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发表时间：
2008-05-12
影响因子：
4
通讯作者：
Krupanidhi, S. B.
中科院分区：
文献类型：
--
作者：
Parui, Jayanta;Krupanidhi, S. B.
研究了镧掺杂PbZrO_3反铁电薄膜的结构和性能。采用溶胶-凝胶法在Pt（111）/Ti/SiO_2/Si衬底上沉积了100.在La改性的程度上，最大极化（P-max）和可恢复能量密度（W）得到了提高，随后降低。在5%La改性的情况下，获得了最大的P-max（在60 MV/m附近，与0.54C/m（2）相似）以及最大的W（在60 MV/m附近，与14.9J/cc相似）。已发现P-max和W都强烈依赖于La诱导的结晶取向。(c)2008年美国物理学会。
Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at. % have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (P-max) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum P-max(similar to 0.54 C/m(2) at similar to 60MV/m) as well as a maximum W (similar to 14.9 J/cc at similar to 60MV/m) have been achieved on 5% La modification. Both P-max and W have been found to be strongly dependent on La-induced crystallographic orientations. (c) 2008 American Institute of Physics.