Nitride Semiconductors and Devices
Nitride Semiconductors and Devices
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DOI：
10.1007/978-3-642-58562-3
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Morkoç
中科院分区：
文献类型：
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作者：
H. Morkoç
宽禁带氮化半导体由于其作为发射体和探测器的直接禁带在光谱的可见到紫外区域，最近引起了极大的关注。此外，这种具有良好异质结和输运特性的材料体系开始在微波放大器中产生非常可观的功率水平。当击穿场在实验上接近预测值时，该材料体系也将非常有吸引力用于功率开关器件。除了过早击穿、高度集中的缺陷和不均匀性之外，许多科学挑战仍然存在，包括对极化效应的明确实验研究。在本文中，简要回顾了已经取得的进展，自发和压电极化效应及其对样品类器件异质结构的影响将被处理。
Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. Moreover, this material system with its favorable hetero-junctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approach the predicted values, this material system would also be very attractive for power switching devices. In addition to the premature breakdown, high concentration of defects, and inhomogeneities, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, following a succinct review of the progress that has been made, spontaneous and piezoelectric polarization effects and their impact on sample device-like hetero-structures will be treated.