Growth of PbSe Quantum Dots Within High‐Index Lead‐Phosphate Glass for Infrared Saturable Absorbers
Growth of PbSe Quantum Dots Within High‐Index Lead‐Phosphate Glass for Infrared Saturable Absorbers
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DOI：
10.1111/jace.12017
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发表时间：
2013
影响因子：
3.9
通讯作者：
P. Kannan;A. Choudhary;B. Mills;Xian Feng;D. Shepherd
中科院分区：
文献类型：
--
作者：
P. Kannan;A. Choudhary;B. Mills;Xian Feng;D. Shepherd
在高折射率低熔点铅磷酸盐玻璃中生长了PbSe量子点。量子点的最低能量激子跃迁通过受控的热处理在红外光谱区域（0.93-2.75μm）内的宽范围内调谐。测量的量子点半径范围在2和5.3 nm之间，在热处理期间长停留时间的时间（t）依赖性为t0.29，表明量子点生长机制倾向于遵循Lifshitz-Slyozov-瓦格纳理论。在1.2µm处的QD可饱和吸收体行为具有约2.1µJ/cm 2的实测饱和通量。
PbSe quantum dots (QDs) were grown in high-refractive-index low-melting-temperature lead-phosphate glass. The lowest energy exciton transition of the QDs was tuned over a wide range within the infrared spectral region (0.93-2.75µm) by a controlled heat treatment. The measured QD radius ranged between 2 and 5.3nm, with a time (t) dependence of t 0.29 for long dwelling times during the heat treatment, indicating that the QD growth mechanism tends to follow Lifshitz-Slyozov-Wagner theory. The QD saturable absorber behavior at 1.2µm had a measured saturation fluence of ~2.1µJ/cm 2 .