Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
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DOI：
10.1109/ted.2016.2519822
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发表时间：
2016
影响因子：
3.1
通讯作者：
M. Elmessary;D. Nagy;M. Aldegunde;J. Lindberg;W. Dettmer;D. Peric;A. García-Loureiro;K. Kalna
中科院分区：
文献类型：
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作者：
M. Elmessary;D. Nagy;M. Aldegunde;J. Lindberg;W. Dettmer;D. Peric;A. García-Loureiro;K. Kalna
各向异性2-D薛定谔方程为基础的量子校正依赖于谷方向被纳入3-D有限元蒙特卡罗模拟工具箱。新的工具箱，然后应用到模拟纳米硅硅绝缘体FinFET的栅极长度为8.1 nm的研究在各种FinFET架构和沟道方向的驱动电流的导电谷的贡献。8.1 nm栅极长度的FinFET的两个横截面：矩形和三角形的，并为两个沟道方向：100 μ m和110 μ m的研究。我们发现量子各向异性效应在类三角形的100 μ m沟道器件中起着最大的作用，使类矩形的100 μ m沟道器件的漏电流增加了约13%，而使漏电流略微降低了2%。量子各向异性在任何具有110 nm沟道取向的器件中具有可忽略的影响。
Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation.