Preparation and ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films on LaNiO3 bottom electrode by the sol–gel method
Preparation and ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films on LaNiO3 bottom electrode by the sol–gel method
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DOI：
10.1088/0022-3727/39/23/020
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发表时间：
2006-12
期刊：
影响因子：
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通讯作者：
Dongyun Guo;Meiya Li;Ling Pei;Benfang Yu;Gengzhu Wu;Xingliang Zhao;Yunbo Wang;Jun Yu
中科院分区：
文献类型：
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作者：
Dongyun Guo;Meiya Li;Ling Pei;Benfang Yu;Gengzhu Wu;Xingliang Zhao;Yunbo Wang;Jun Yu
研究了在LaNiO_3底电极上制备Bi_4 Zr_（0.5）Ti_（2.5）O_（12）薄膜的工艺和性能。采用溶胶-凝胶法在LaNiO 3底电极上制备了Bi4Zr0.5Ti2.5O12薄膜。采用X射线衍射和扫描电子显微镜对薄膜的结构和形貌进行了表征。结果表明，薄膜为致密的钙钛矿结构。Pt/BZT/LaNiO 3电容器在25 V电压下的2 Pr和2 Vc分别为28.2 µC cm−2和14.7 V。经过1 × 1010次循环切换后，Pr值下降到其疲劳前值的87%。在1 kHz时，介电常数和介电损耗分别为204和0.024。漏电流测试表明，薄膜具有良好的绝缘性能。
We have investigated the preparation and properties of Bi4Zr0.5Ti2.5O12 thin films on the LaNiO3 bottom electrode. The Bi4Zr0.5Ti2.5O12 thin films were fabricated on the LaNiO3 bottom electrode using the sol–gel method. The structure and morphology of the films were characterized using x-ray diffraction and scanning electron microscopy. The results show that the films are a perovskite phase with a dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 µC cm−2 and 14.7 V respectively under the applied voltage of 25 V. After the switching of 1 × 1010 cycles, the Pr value decreases to 87% of its pre-fatigue values. The dielectric constant and the dielectric loss are about 204 and 0.024 at 1 kHz, respectively. The films show good insulating behaviour according to the test of leakage current.