Optimisation of photonic crystal coupling through waveguide design.
Optimisation of photonic crystal coupling through waveguide design.
复制标题
通过波导设计优化光子晶体耦合。
DOI：
10.1007/s11082-016-0888-0
复制
发表时间：
2017
影响因子：
3
通讯作者：
Taylor RJE
中科院分区：
文献类型：
--
作者：
Taylor RJE
本文研究了工作在关键波长的光子晶体面发射激光器的多种结构设计。最初，对来自威廉姆斯等人的结构进行建模，修改该结构以包括附加的GaAs波导层（称为镇流层）并包括附加的PC层（称为双层德克尔）。这些结构的耦合计算和波导建模的组合建模，并与原始结构进行比较。我们发现，这两种方案都增加了耦合，但目前的制造挑战。接下来，我们模拟了在关键波长（400 nm，1.3和10 µm）下工作的标准激光器结构，其中光子晶体位于有源区上方，并探索了增加光子晶体厚度的影响。我们发现，增加的厚度增加耦合系数，但不是真正的厚度考虑的全部范围。这项研究允许一个更普遍的比较使用的全半导体，或空含有PCSELs进行，我们发现，实现所有半导体PCSELs覆盖范围广泛的材料和波长是可能的。
This paper considers multiple structural designs for photonic crystal surface emitting lasers operating at key wavelengths. Initially a structure from Williams et al. is modelled, the structure is modified to include an additional GaAs waveguide layer (termed ballast layer) and to include an additional PC layer (termed double decker). These structures are modelled by a combination of coupling calculation and waveguide modelling and are compared to the original structure. We show that both of these schemes give an increase in coupling, but present fabrication challenges. Next, we model standard laser structures operating at key wavelengths (400 nm, 1.3 and 10 µm) where a photonic crystal is located above the active region and explore the effect of increasing thickness of photonic crystal. We find that increasing the thickness increases the coupling coefficient but not true for the full range of thicknesses considered. This study allows a more universal comparison of the use of all-semiconductor, or void containing PCSELs to be conducted and we find that the realisation of all semiconductor PCSELs covering a wide range of material and wavelengths are possible.