Synthesis of ABCBA-type miktoarm H-shaped copolymers with poly(3-hexylthiophene) segments and their application to intrinsically stretchable photonic transistor memor
Synthesis of ABCBA-type miktoarm H-shaped copolymers with poly(3-hexylthiophene) segments and their application to intrinsically stretchable photonic transistor memor
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ABCBA型聚(3-己基噻吩)链段miktoarm H形共聚物的合成及其在本征可拉伸光子晶体管存储器中的应用
DOI：
10.1039/d3tc00690e
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发表时间：
2023
影响因子：
6.4
通讯作者：
T. Higashihara
中科院分区：
文献类型：
--
作者：
S. Inagaki;C.-Y. Sung;A.-C. Chang;Y.-C. Lin;W.-C. Chen;T. Higashihara
最近，具有固有弹性的半导体聚合物因其在可穿戴设备中的应用而引起关注。本文中，我们通过Cu催化的具有炔基的链内官能化的PS-B-P3 HT和具有叠氮基的α，ω-链端官能化的PnBA之间的叠氮-炔环加成反应合成了新型ABCBA型杂臂H形共聚物（其中A、B和C分别代表聚苯乙烯（PS）、聚（3-己基噻吩）（P3 HT）和聚（丙烯酸正丁酯）（PnBA）。ABCBA型杂臂H型共聚物的薄膜由于具有低玻璃化转变温度的内部PnBA链段而表现出高弹性，并且由于外部PS-b-P3 HT链段而表现出良好的光子晶体管存储特性。它们还表现出良好的存储器耐久性沿着写-读-擦-读周期，宽的存储器窗口，高开/关比，和优异的保持性能。在拉伸时，聚合物膜表现出无裂纹的形态，其中大范围的相分离域被牺牲以消散所施加的应力，同时保持短程层状晶体结构。我们的研究结果建立了一个开创性的战略，创造本质上可伸缩的内存使用ABCBA型miktoarm H型共聚物。
Recently, semiconducting polymers with intrinsic elasticity have garnered attention for their application in wearable devices. Herein, we synthesized a novel ABCBA-type miktoarm H-shaped copolymer (where A, B, and C represent polystyrene (PS), poly(3-hexylthiophene) (P3HT), and poly(n-butyl acrylate) (PnBA), respectively) via a Cu-catalyzed azide–alkyne cycloaddition reaction between in-chain-functionalized PS-b-P3HT with an alkynyl group and α,ω-chain-end-functionalized PnBA with azide groups. The thin films of the ABCBA-type miktoarm H-shaped copolymers exhibited high elasticity because of an inner PnBA segment with a low glass transition temperature and good photonic transistor memory properties because of outer PS-b-P3HT segments. They also exhibited good memory endurance along write–read–erase–read cycles, a wide memory window, a high ON/OFF ratio, and excellent retention properties. Upon stretching, the polymer films exhibited crack-free morphologies wherein large-ranged phase-separated domains were sacrificed to dissipate the applied stress while maintaining short-ranged lamellar crystal structures. Our results establish a pioneering strategy for creating intrinsically stretchable memory using ABCBA-type miktoarm H-shaped copolymers.