A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs
A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs
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DOI：
10.1109/22.920164
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发表时间：
2001-05
影响因子：
4.3
通讯作者：
Chih-Hung Chen;M. Deen
中科院分区：
文献类型：
--
作者：
Chih-Hung Chen;M. Deen
本文提出了一种基于级联结构的噪声和散射参数去嵌入的通用方法，该方法采用一个“开放”和两个“通过”虚拟结构。该技术不需要对探头焊盘或互连进行任何等效电路建模。这种去嵌入过程对于与任何类型的几何图形具有互连的设计以及在几十吉赫兹频率下运行的设备都是有效的。
A general deembedding procedure using one "OPEN" and two "THRU" dummy structures for noise and scattering parameter deembedding based on cascade configurations is presented in this paper. This technique does not require any equivalent-circuit modeling of probe pads or interconnections. This deembedding procedure is valid for designs having interconnections with any kinds of geometries and for devices operated at frequencies of several tens of gigahertz.