A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps
A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps
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0.13μm SiGe BiCMOS 技术，f T /f max 为 240/330 GHz，栅极延迟低于 3 ps
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
Y. Yamamoto
中科院分区：
文献类型：
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作者：
H. Rücker;B. Heinemann;W. Winkler;R. Barth;J. Borngraber;J. Drews;G. Fischer;A. Fox;T. Grabolla;U. Haak;D. Knoll;F. Korndorfer;A. Mai;S. Marschmeyer;P. Schley;D. Schmidt;J. Schmidt;K. Schulz;B. Tillack;D. Wolansky;Y. Yamamoto
介绍了一种用于毫米波应用的0.13µm SiGe BiCMOS工艺。该技术以高速HBT(fT=240 GHz，f max=330 GHz，BV CeO=1.7 V)和高压HBT(fT=50 GHz，f max=130 GHz，BV CeO=3.7 V)为特色，集成在双栅极三势垒RF-CMOS工艺中。环形振荡器的门延迟为2.9ps，低噪声放大器的频率为122 GHz，LC振荡器的频率高于200 GHz。
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage HBTs (f T =50 GHz, f max =130 GHz, BV CEO =3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.