Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques
Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques
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DOI：
10.1109/jxcdc.2019.2961333
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发表时间：
2019-12
影响因子：
2.4
通讯作者：
Phillip Dang;Zexuan Zhang;J. Casamento;Xiang Li;J. Singhal;D. Schlom;D. Ralph;H. Xing;D. Jena-D.
中科院分区：
文献类型：
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作者：
Phillip Dang;Zexuan Zhang;J. Casamento;Xiang Li;J. Singhal;D. Schlom;D. Ralph;H. Xing;D. Jena-D.
自旋轨道转矩（SOT）是一种很有前途的磁存储器写入机制，而场效应晶体管（fet）是逻辑运算的金标准器件。自旋轨道转矩场效应晶体管（SOTFET）是一种通过磁电多铁体（MF）的转导将sotet控制的铁磁体耦合到半导体晶体管沟道上的器件。这使得sotet既可以作为存储器件又可以作为逻辑器件，但其实现取决于选择合适的材料。在本报告中，我们讨论并参数化了可导致sotet异质结构的材料类型。
Spin–orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin–orbit torque field-effect transistor (SOTFET) is a proposed device that couples an SOT-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic (MF). This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to an SOTFET heterostructure.