Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature

Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature
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DOI：
10.1021/acs.cgd.0c01485
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发表时间：
2021-02
期刊：
Crystal Growth & Design
影响因子：
3.8
通讯作者：
Dhruba K. Pattadar;Quintin B. Cheek;A. Sartori;Yifan Zhao;R. Giri;B. Murphy;O. Magnussen;S. Maldonado
Dhruba K. Pattadar;Quintin B. Cheek;A. Sartori;Yifan Zhao;R. Giri;B. Murphy;O. Magnussen;S. Maldonado
中科院分区：
化学2区
文献类型：
--
作者：
Dhruba K. Pattadar;Quintin B. Cheek;A. Sartori;Yifan Zhao;R. Giri;B. Murphy;O. Magnussen;S. Maldonado

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