Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
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通过在发射极结插入超薄 AlN 层提高 GaN/SiC 异质结双极晶体管的电流增益
DOI：
10.4028/www.scientific.net/msf.615-617.979
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
J. Suda
中科院分区：
文献类型：
--
作者：
H. Miyake;T. Kimoto;J. Suda
提出了在 n-GaN/p-SiC 发射结处具有超薄 AlN 插入层的 GaN/SiC 异质结双极晶体管 (HBT)，以提高载流子注入效率。 n-GaN/AlN/p-SiC异质结的电流-电压特性表现出非常小的反向泄漏和良好的整流性。电容电压测量表明，通过插入AlN，n-GaN和p-SiC之间的导带偏移从-0.74 eV减小到-0.54 eV，这表明GaN/AlN/SiC异质结可能表现出更好的电子注入效率。具有初始 N* 预辐照的 GaN/AlN/SiC HBT 获得了显着改善的共基极电流增益 (α~0.2)，而对于没有 AlN 层的 GaN/SiC HBT 来说，共基极电流增益非常低 (α~0.001)。
GaN/SiC Heterojunction Bipolar Transistors (HBTs) with ultra-thin AlN insertion layers at the n-GaN/p-SiC emitter junction are proposed to improve carrier injection efficiency. The current-voltage characteristics of n-GaN/AlN/p-SiC heterojunctions have exhibited very small reverse leakage and good rectification. The capacitance-voltage measurement have revealed that the conduction band offset between n-GaN and p-SiC has been reduced from -0.74 eV to -0.54 eV by insertion of AlN, indicating that the GaN/AlN/SiC heterojunction may show better electron-injection efficiency. A significantly improved common-base current gain (α~0.2) is obtained for GaN/AlN/SiC HBTs with initial N* pre-irradiation, while it was very low (α~0.001) for GaN/SiC HBTs without AlN layers.