The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating
The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating
复制标题
多电子束加热MBE法在Si衬底上生长3C-SiC单晶
DOI：
10.1143/jjap.25.1307
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发表时间：
1986
影响因子：
1.5
通讯作者：
Sei
中科院分区：
文献类型：
--
作者：
S. Kaneda;Yoshiki Sakamoto;Chikara Nishi;M. Kanaya;Sei
用分子束外延法在Si衬底上生长了3C-SiC单晶。可以在衬底温度Tsub=1150°C下生长单晶膜。与其他方法相比，该温度相对较低。从衬底扩散的Si在SiC晶体生长中起着重要的作用，特别是对于非常薄的薄膜。考虑到MBE法的生长条件，Si和C分子束的各自强度（JSi和JC）及其强度比JSi/JC应根据膜厚选择合适的值。
The growth of a single crystal of 3C-SiC on a Si substrate by the MBE method has been performed. A single-crystal film can be grown at a substrate temperature Tsub=1150°C. This temperature is relatively low compared to that used in other methods. The diffused Si from a substrate plays an important part in the crystal growth of SiC, especially for a very thin film. The individual intensity of Si and C molecular beams (JSi and JC) and their intensity ratio JSi/JC should be selected with suitable values in accordance with the film thickness, considering the growth condition of the MBE method.