Doubly resonant LO-phonon Raman scattering via the deformation potential with a single quantum well.
Doubly resonant LO-phonon Raman scattering via the deformation potential with a single quantum well.
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通过单量子阱的形变势实现双共振 LO 声子拉曼散射。
DOI：
10.1103/physrevb.34.7444
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
Sputz
中科院分区：
文献类型：
--
作者：
Miller;Kleinman;Tu;Sputz
在低温条件下，用厚度为28.3 μ m的高质量GaAs单量子阱观察到了由LO声子引起的双共振拉曼散射（DRRS），其中入射和出射光子分别与n= 1的轻空穴和重空穴自由激子共振.测量的圆和线偏振特性的DRRS表明，它是由相当大的自旋弛豫和约8%的Fröhlich散射的混合物修改的变形势过程占主导地位。与块状GaAs相比，DRRS没有观察到或预期这两个过程之间的干扰。
Doubly resonant Raman scattering (DRRS) due to LO phonons where the incoming and outgoing photons are resonant with the n= 1 light-and heavy-hole free excitons, respectively, has been observed at low temperature with a very-high-quality single GaAs quantum well of estimated thickness 28.3 Å. The measured circular and linear polarization characteristics of this DRRS show that it is dominated by the deformation-potential process modified by considerable spin relaxation and an admixture of about 8% Fröhlich scattering. In contrast to bulk GaAs, interference between these two processes is not observed or expected for DRRS.