Effect of interfacial structures on anomalous Hall behavior in perpendicular Co/Pt multilayers
Effect of interfacial structures on anomalous Hall behavior in perpendicular Co/Pt multilayers
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DOI：
10.1063/1.4795331
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发表时间：
2013-03
影响因子：
4
通讯作者：
J. Zhang;Zhenglong Wu;S. Wang;Chong-Jun Zhao;G. Yang;Shilei Zhang;Yizhi Liu;Suqin Liu;J. Teng;G. Yu
中科院分区：
文献类型：
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作者：
J. Zhang;Zhenglong Wu;S. Wang;Chong-Jun Zhao;G. Yang;Shilei Zhang;Yizhi Liu;Suqin Liu;J. Teng;G. Yu
在垂直[Co/Pt]3多层膜中夹入MgO/CoO混合双层膜中，获得了异常霍耳电阻率的大幅度增强。饱和霍尔电阻率（ρxy）比纯[Co/Pt]3多层膜和纯MgO层夹在[Co/Pt] 3多层膜中的电阻率分别提高了250%和67%。同时，MgO/CoO杂化多层膜的垂直磁各向异性增强。ρxy的大幅度提高源于改性的金属/氧化物界面结构，以及由于混合双层的插入而改善的核心[Co/Pt]3多层膜的结晶。
A large enhancement of anomalous Hall resistivity was obtained in the perpendicular [Co/Pt]3 multilayers sandwiched by MgO/CoO hybrid bilayers. For example, the saturation Hall resistivity (ρxy) is greatly increased, which is 250% and 67% larger than that in pure [Co/Pt]3 multilayers and that in [Co/Pt]3 multilayers sandwiched by pure MgO layers, respectively. Meanwhile, the perpendicular magnetic anisotropy in the multilayers with MgO/CoO hybrid bilayers was enhanced. The large enhancement of ρxy originates from the modified metal/oxide interfacial structures, together with improved crystallization of core [Co/Pt]3 multilayers, due to the insertion of hybrid bilayers.