Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate
Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate
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DOI：
10.7567/jjap.56.03bb05
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发表时间：
2017-02
影响因子：
1.5
通讯作者：
T. Ban;S. Migita;M. Uenuma;N. Okamoto;Y. Ishikawa;Y. Uraoka;I. Yamashita;Shin-ichi Yamamoto
中科院分区：
文献类型：
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作者：
T. Ban;S. Migita;M. Uenuma;N. Okamoto;Y. Ishikawa;Y. Uraoka;I. Yamashita;Shin-ichi Yamamoto
金属纳米粒子（NP）嵌入无结场效应晶体管（JL-FET）的沟道长度约为10纳米的制造和演示。利用各向异性湿法腐蚀绝缘体上硅（SOI）衬底，形成V形槽，并定义了一个纳米级的通道。使用生物纳米工艺（BNP）将金属纳米颗粒选择性地放置在V形槽的底部上。将JL-FET应用于浮栅存储器，并用于研究靠近短沟道的电荷的影响。出现低电压操作和宽阈值电压的存储行为。通过模拟估计，相当于大约10个电子的正电荷和负电荷累积在一个NP中。预期JL-FET可以克服浮栅存储器的缩放限制。
Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a channel length of about sub-10-nm are fabricated and demonstrated. The anisotropic wet etching of a silicon-on-insulator (SOI) substrate was utilized to form V-grooves and define a nanometer-scale channel. Metal NPs are selectively placed onto the bottom of a V-groove using a bio nano process (BNP). A JL-FET is applied to a floating gate memory and used to study the impacts of charges close to the short channel. Low-voltage operation and memory behavior of broad threshold voltage appear. It is estimated by simulation that positive and negative charges equivalent to approximately 10 electrons are accumulated in one NP. It is expected that the JL-FETs can overcome the scaling limitations of floating gate memories.