Performance improvement of on-chip integrable terahertz microbolometer arrays using nanoscale meander titanium thermistor
Performance improvement of on-chip integrable terahertz microbolometer arrays using nanoscale meander titanium thermistor
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DOI：
10.1063/1.5083643
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发表时间：
2019-06-07
影响因子：
3.2
通讯作者：
Inokawa, Hiroshi
中科院分区：
文献类型：
--
作者：
Banerjee, Amit;Satoh, Hiroaki;Inokawa, Hiroshi
在这项研究中，非制冷天线耦合微测辐射热计阵列的制造，以检测太赫兹波，通过使用纳米级的曲折形钛电阻器的设计宽度DW=0.1和0.2米，分别在SiO2和SiNx基板。在最大允许偏置电流（DW=0.1m时I-b=50，DW=0.2m时I-b= 100 A）下，具有DW = 0.1m热敏电阻的每个单元器件的电响应度（787 V/W）是具有DW= 0.2m热敏电阻的单元器件（386 V/W）的两倍。然而，对于具有DW= 0.2m的晶闸管的单元器件，在I-b= 100 A时，具有DW = 0.1m的晶闸管的单元器件的计算的噪声等效功率（NEP）为Hz。因此，DW的减少并没有导致NEP的改善。这项研究验证了我们以前的调查，如电阻的温度系数（TCR）和电阻率的上下文中的设备小型化的宽度对设备参数的影响。较薄的金属互连（热敏电阻器）中的较小晶粒尺寸可以与器件的较低TCR和增加的电阻率相关联。因此，设计中响应度的增强主要是由于纳米级曲折设计，然而，这对器件的噪声响应是有害的。这些具有纳米级Ti曲折晶闸管的器件在单元器件中提供高响应度，具有进一步小型化的范围，并且具有作为片上可集成检测器阵列的应用的显著潜力。
In this study, uncooled antenna-coupled microbolometer arrays were fabricated to detect terahertz waves by using nanoscale meander-shaped Ti thermistors with design widths of DW=0.1 and 0.2m, respectively, on SiO2 and SiNx substrates. Each unit device with a thermistor with DW=0.1m yielded double the electrical responsivity (787V/W) of unit devices with thermistors with DW=0.2m (386V/W) at the maximum allowable bias current (I-b=50 for DW=0.1m and 100A for DW=0.2m, respectively). However, the calculated noise-equivalent power (NEP) of unit devices with thermistors with DW=0.1m was Hz at I-b=100A for unit devices with thermistors with DW=0.2m. Hence, the reduction in DW did not lead to an improvement in NEP. This study validates our previous investigation into the effect of width on such device parameters such as the temperature coefficient of resistance (TCR) and resistivity in the context of device miniaturization. The smaller grain size in thinner metal interconnects (thermistors) can be linked to the lower TCR and increased resistivity of the devices. Thus, the enhancement in responsivity in the design was largely due to the nanoscale meander design that, however, was detrimental to the noise response of the devices. These devices with nanoscale Ti meander thermistors deliver high responsivity in unit devices with scope for further miniaturization and have significant potential for application as on-chip integrable detector arrays.