Polymorphism in pentacene thin films on SiO2 substrate
Polymorphism in pentacene thin films on SiO2 substrate
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DOI：
10.1063/1.2709516
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发表时间：
2007-02-19
影响因子：
4
通讯作者：
Saito, Yoshio
中科院分区：
文献类型：
--
作者：
Kakudate, Toshiyuki;Yoshimoto, Noriyuki;Saito, Yoshio
采用掠入射X射线衍射法（GIXD）研究了SiO2衬底上并五苯薄膜的多晶型。面内GIXD图案由真空沉积的SiO2膜获得。通过比较较厚膜的面内结构，阐明了SiO2膜具有与100 nm厚的膜相同的晶格常数。两种晶型的晶面间距d（11）的一致性表明，体相生长到薄膜相的外延生长。结合所获得的晶胞参数，从成核过程中的平衡形状角度讨论了多晶型之间的转变机理。(c)2007年，美国物理学会。
The polymorphism of pentacene thin films on SiO2 substrate was investigated by grazing incidence x-ray diffractometry (GIXD). The in-plane GIXD patterns were obtained from vacuum deposited ultrathin films. By comparing the in-plane structures with thicker films, it was elucidated that ultrathin films have the same lattice constants as that of films of 100 nm thick. Consistency of determined interplanar d(11) spacings of the two polymorphs suggests the epitaxial growth that bulk phase grows onto thin-film phase. Considering the obtained unit cell parameters, the mechanism of the transformation between polymorphs was discussed in terms of equilibrium shapes during nucleation process. (c) 2007 American Institute of Physics.