Investigation of magnetocrystalline anisotropy by planar hall effect in GaMnAs epilayers grown on vicinal GaAs substrates
Investigation of magnetocrystalline anisotropy by planar hall effect in GaMnAs epilayers grown on vicinal GaAs substrates
复制标题
通过平面霍尔效应研究邻接 GaAs 衬底上生长的 GaMnAs 外延层的磁晶各向异性
DOI：
10.1063/1.2158688
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发表时间：
2006
影响因子：
3.2
通讯作者：
M. Dobrowolska
中科院分区：
文献类型：
--
作者：
W. Lim;Xiaofeng Liu;K. Dziatkowski;Z. Ge;S. Shen;J. Furdyna;M. Dobrowolska
由于平面霍尔效应和异常霍尔效应（AHE）的叠加，在相邻GaAs衬底上生长的铁磁性GaMnAs薄膜在面内磁场存在下观察到霍尔电阻的不对称位移。不对称位移（即，在相反符号的磁场下观察到的霍尔电压值之间的差异）是磁晶各向异性强度的直接表现，它将磁化限制在优选的晶体平面上，从而导致向GaMnAs层垂直的磁化分量为非零。观察到电阻的不对称性与垂直高场结构中测量的饱和AHE电阻成正比，证实了这一点。
An asymmetric shift of the Hall resistance in the presence of an in-plane magnetic field is observed in ferromagnetic GaMnAs epilayers grown on vicinal GaAs substrates, due to the superposition of both the planar Hall effect and the anomalous Hall effect (AHE). The asymmetric shift (i.e., the difference between the values of the Hall voltage observed at magnetic field of opposite sign) is a direct manifestation of the strength of the magnetocrystalline anisotropy, which confines the magnetization to the preferred crystalline plane, thus resulting in a nonzero component of the magnetization normal to the GaMnAs layer. This is confirmed by the observation that the asymmetry in the resistance is proportional to the saturated AHE resistance measured in perpendicular high field configuration.