Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate
Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate
复制标题
GaAs衬底上混晶外延生长过程中的各向异性弯曲
DOI：
10.1063/1.1660904
复制
发表时间：
1972
影响因子：
3.2
通讯作者：
H. Nagai
中科院分区：
文献类型：
--
作者：
H. Nagai
GaxIn1−xAs 和 GaAsxP1−x 晶体从气相沉积在 GaAs 衬底上，并研究了这些系统伴随异质外延生长的变形特性。当基体晶面为{100}时，发现在<110>和<110>方向上存在明显的弯曲各向异性，这种现象不能用简单的双金属模型来解释。还检查了基底的结晶表面对变形的影响。
Crystals of GaxIn1−xAs and GaAsxP1−x were deposited on GaAs substrate from the vapor phase, and the deformation properties of these systems accompanying the heteroepitaxial growth were investigated. When the crystal surface of the substrate was {100}, it was found that there was an evident anisotropy of bending in the directions of 〈110〉 and 〈110〉, and this phenomenon cannot be explained by the simple bimetal model. The influence of the crystalline surface of the substrate on the deformation was also checked.