Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene
Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene
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DOI：
10.7567/apex.8.035101
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发表时间：
2015-03-01
影响因子：
2.3
通讯作者：
Saiki, Koichiro
中科院分区：
文献类型：
--
作者：
Terasawa, Tomo-o;Saiki, Koichiro
为了获得大面积单晶石墨烯，化学气相沉积（CVD）在Cu上生长被认为是最有前途的方法。最近，Cu表面的氧被发现可以抑制石墨烯的成核。然而，氧在气相中的作用还没有得到充分的阐明。在这里，我们使用辐射模式光学显微镜研究了O-2分压（P-O2）对石墨烯CVD生长的影响。石墨烯的成核密度随P-O2的增加而单调减小，在一定压力下其生长速率达到最大值。我们的研究结果表明，P-O2是石墨烯CVD生长过程中需要优化的重要参数。(C) 2015日本应用物理学会
To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O-2 partial pressure (P-O2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with P-O2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that P-O2 is an important parameter to optimize in the CVD growth of graphene. (C) 2015 The Japan Society of Applied Physics