Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method
Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method
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DOI：
10.1088/1674-4926/40/3/032701
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发表时间：
2019-03-01
影响因子：
5.1
通讯作者：
Minami, Tadatsugu
中科院分区：
文献类型：
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作者：
Miyata, Toshihiro;Watanabe, Kyosuke;Minami, Tadatsugu
我们改进了光伏性能的Cu 2 O基异质结太阳能电池使用n型氧化物半导体薄膜制备的溅射设备与我们新开发的多室系统。我们还获得了最高的效率（3.21%），在AZO/p-Cu 2 O异质结太阳能电池制备与优化的预溅射条件，使用我们新开发的多室溅射系统。该值实现了与通过脉冲激光沉积方法制备的具有类似结构的AZO/Cu 2 O太阳能电池相同或更高的特性。
We improved the photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency (3.21%) in an AZO/p-Cu2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu2O solar cells with a similar structure prepared by the pulse laser deposition method.