Ion‐beam‐induced silicide formation
Ion‐beam‐induced silicide formation
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离子束诱导硅化物形成
DOI：
10.1063/1.90716
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发表时间：
1979
影响因子：
4
通讯作者：
J. Mayer
中科院分区：
文献类型：
--
作者：
B. Tsaur;Z. Liau;J. Mayer
卢瑟福背散射光谱法和 X 射线衍射分析已用于研究惰性气体离子轰击导致的金属薄膜（Pt、Ni 和 Hf）与硅基底之间的混合。只要离子范围超过膜厚度，就可以在界面附近观察到硅化物相（Pt2Si、Ni2Si 和 HfSi）。对于固定剂量，硅化物厚度随着离子和金属的原子质量而增加，并且 Pt2Si 的硅化物厚度大于 HfSi。 Pt2Si 的生长表现出对 Ar、Kr 和 Xe 离子剂量的平方根依赖性。离子诱导硅化物形成的现象类似于热退火形成的现象，直到整个金属膜在反应中被消耗，此时随着结构衍射图案的消失，逐渐混合将金属重新分布到样品的更深区域。
Rutherford‐backscattering spectrometry and x‐ray‐diffraction analysis have been used to investigate intermixing between thin metal films (Pt, Ni, and Hf) and silicon substrates as a result of inert‐gas ion bombardment. Silicide phases (Pt2Si, Ni2Si, and HfSi) were observed near the interface as long as the ion range exceeds the film thickness. For a fixed dose, the silicide thickness increases with the atomic mass of both ion and metal and is greater for Pt2Si than HfSi. The growth of Pt2Si showed a square‐root dependence on ion dose for Ar, Kr, and Xe ions. The phenomenon of ion‐induced silicide formation is similar to formation resulting from thermal anneal until the whole metal film is consumed in the reaction, at which point a progressive intermixing to redistribute the metal into deeper regions of the sample occurred along with the disappearance of the structure diffraction patterns.