NONMONOTONIC TEMPERATURE-DEPENDENT RESISTANCE IN LOW DENSITY 2D HOLE GASES
NONMONOTONIC TEMPERATURE-DEPENDENT RESISTANCE IN LOW DENSITY 2D HOLE GASES
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低密度二维孔气体中的非单调温度依赖性电阻
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
K. West
中科院分区：
文献类型：
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作者：
A. Mills;Jr.;A. P. Ramirez;L. Pfeiffer;K. West
高峰空穴迁移率为1.7 × 10^6 cm ^2/Vs的非栅控GaAs/AlGaAs量子威尔斯中的低温纵向每平方电阻Rxx（T）对于低至3.8 × 10^9 cm-2的2D空穴密度p是金属性的。电子对电阻的贡献R_{el}（T）是T的非单调函数，对于kT EF，表现出热激活R_{el}（T）~ exp{-E_a/kT}。R_{el}（T）的形式与密度无关，表明了金属态低T散射机制与高T散射机制之间的基本关系。
The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic contribution to the resistance, R_{el}(T), is a nonmonotonic function of T, exhibiting thermal activation, R_{el}(T) ~ exp{-E_a/kT}, for kT EF. The form of R_{el}(T) is independent of density, indicating a fundamental relationship between the low and high T scattering mechanisms in the metallic state.